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Micromachining and mechanical properties of GaInAs/InP microcantilevers

Identifieur interne : 016C50 ( Main/Repository ); précédent : 016C49; suivant : 016C51

Micromachining and mechanical properties of GaInAs/InP microcantilevers

Auteurs : RBID : Pascal:98-0243672

Descripteurs français

Pascal (Inist)
- Mécanique précision, Miniaturisation, Poutre cantilever, Encorbellement, Processus fabrication, Attaque chimique, Propriété mécanique, Etude expérimentale, Essai dureté, Essai flexion, Microusinage, Gallium arséniure, Indium arséniure, Indium phosphure.

English descriptors

KwdEn :
- Bending test, Cantilever, Cantilever beam, Chemical etching, Experimental study, Gallium arsenides, Hardness test, Indium arsenides, Indium phosphide, Mechanical properties, Micromachining, Miniaturization, Precision engineering, Production process.

Abstract

Micro cantilever beams have been fabricated by selective wet etching of GaInAs/InP heterostructures with InP layer used as a sacrificial layer and GaInAs regions acting as semiconductor masks and/or etch stop layers. With deep front side micromachining, microstructures of one micron thick were fabricated and subsequently characterized by means of a nanoindentation system. For GaInAs microstructures, a Young's modulus between 70 and 100 GPa range depending on analysis assumptions was calculated. For tri-layered structures with one micron thick sacrificial layer, we faced the problem of stiction. For addressing this issue, we fabricated several series of beam sets which differ mainly in length and width. A critical length corresponding to the transition between pinned and self-sustaining structures was found and subsequently analysed in terms of Young's modulus with values consistent with mechanical measurements.

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<author><name sortKey="Mounaix, P" uniqKey="Mounaix P">P. Mounaix</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 9929, Université des Sciences et Technologies de Lille, BP 69</s1>
<s2>59652 Villeneuve d'Ascq</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region>
<settlement type="city">Villeneuve d'Ascq</settlement>
</placeName>
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</author>
<author><name sortKey="Delobelle, P" uniqKey="Delobelle P">P. Delobelle</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Mécanique Appliquée R. Chaléat, URA CNRS 04, Université de Franche Comté 24 Rue de l'épitaphe</s1>
<s2>25030 Besançon</s2>
<s3>FRA</s3>
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<settlement type="city">Besançon</settlement>
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<author><name sortKey="Melique, X" uniqKey="Melique X">X. Melique</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 9929, Université des Sciences et Technologies de Lille, BP 69</s1>
<s2>59652 Villeneuve d'Ascq</s2>
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<author><name sortKey="Bornier, L" uniqKey="Bornier L">L. Bornier</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Mécanique Appliquée R. Chaléat, URA CNRS 04, Université de Franche Comté 24 Rue de l'épitaphe</s1>
<s2>25030 Besançon</s2>
<s3>FRA</s3>
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<author><name sortKey="Lippens, D" uniqKey="Lippens D">D. Lippens</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 9929, Université des Sciences et Technologies de Lille, BP 69</s1>
<s2>59652 Villeneuve d'Ascq</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<seriesStmt><idno type="ISSN">0921-5107</idno>
<title level="j" type="abbreviated">Mater. sci. eng., B, Solid-state mater. adv. technol.</title>
<title level="j" type="main">Materials science & engineering. B, Solid-state materials for advanced technology</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bending test</term>
<term>Cantilever</term>
<term>Cantilever beam</term>
<term>Chemical etching</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Hardness test</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Mechanical properties</term>
<term>Micromachining</term>
<term>Miniaturization</term>
<term>Precision engineering</term>
<term>Production process</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Mécanique précision</term>
<term>Miniaturisation</term>
<term>Poutre cantilever</term>
<term>Encorbellement</term>
<term>Processus fabrication</term>
<term>Attaque chimique</term>
<term>Propriété mécanique</term>
<term>Etude expérimentale</term>
<term>Essai dureté</term>
<term>Essai flexion</term>
<term>Microusinage</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Indium phosphure</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Micro cantilever beams have been fabricated by selective wet etching of GaInAs/InP heterostructures with InP layer used as a sacrificial layer and GaInAs regions acting as semiconductor masks and/or etch stop layers. With deep front side micromachining, microstructures of one micron thick were fabricated and subsequently characterized by means of a nanoindentation system. For GaInAs microstructures, a Young's modulus between 70 and 100 GPa range depending on analysis assumptions was calculated. For tri-layered structures with one micron thick sacrificial layer, we faced the problem of stiction. For addressing this issue, we fabricated several series of beam sets which differ mainly in length and width. A critical length corresponding to the transition between pinned and self-sustaining structures was found and subsequently analysed in terms of Young's modulus with values consistent with mechanical measurements.</div>
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<fA03 i2="1"><s0>Mater. sci. eng., B, Solid-state mater. adv. technol.</s0>
</fA03>
<fA05><s2>51</s2>
</fA05>
<fA06><s2>1-3</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Micromachining and mechanical properties of GaInAs/InP microcantilevers</s1>
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<fA11 i1="01" i2="1"><s1>MOUNAIX (P.)</s1>
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<fA11 i1="02" i2="1"><s1>DELOBELLE (P.)</s1>
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<fA11 i1="03" i2="1"><s1>MELIQUE (X.)</s1>
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<fA11 i1="04" i2="1"><s1>BORNIER (L.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>LIPPENS (D.)</s1>
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<fA12 i1="01" i2="1"><s1>HENINI (M.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Institut d'Electronique et de Microélectronique du Nord, UMR CNRS 9929, Université des Sciences et Technologies de Lille, BP 69</s1>
<s2>59652 Villeneuve d'Ascq</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Laboratoire de Mécanique Appliquée R. Chaléat, URA CNRS 04, Université de Franche Comté 24 Rue de l'épitaphe</s1>
<s2>25030 Besançon</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA20><s1>258-262</s1>
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<fA21><s1>1998</s1>
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<fA43 i1="01"><s1>INIST</s1>
<s2>12899B</s2>
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<s1>© 1998 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>10 ref.</s0>
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<fC01 i1="01" l="ENG"><s0>Micro cantilever beams have been fabricated by selective wet etching of GaInAs/InP heterostructures with InP layer used as a sacrificial layer and GaInAs regions acting as semiconductor masks and/or etch stop layers. With deep front side micromachining, microstructures of one micron thick were fabricated and subsequently characterized by means of a nanoindentation system. For GaInAs microstructures, a Young's modulus between 70 and 100 GPa range depending on analysis assumptions was calculated. For tri-layered structures with one micron thick sacrificial layer, we faced the problem of stiction. For addressing this issue, we fabricated several series of beam sets which differ mainly in length and width. A critical length corresponding to the transition between pinned and self-sustaining structures was found and subsequently analysed in terms of Young's modulus with values consistent with mechanical measurements.</s0>
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<s5>04</s5>
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<s5>04</s5>
</fC03>
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<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Miniaturisation</s0>
<s5>05</s5>
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<fC03 i1="02" i2="X" l="ENG"><s0>Miniaturization</s0>
<s5>05</s5>
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<fC03 i1="02" i2="X" l="GER"><s0>Miniaturisierung</s0>
<s5>05</s5>
</fC03>
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<s5>05</s5>
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<fC03 i1="03" i2="X" l="FRE"><s0>Poutre cantilever</s0>
<s5>06</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Cantilever beam</s0>
<s5>06</s5>
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<fC03 i1="03" i2="X" l="SPA"><s0>Viga cantilever</s0>
<s5>06</s5>
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<fC03 i1="04" i2="X" l="FRE"><s0>Encorbellement</s0>
<s5>07</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Cantilever</s0>
<s5>07</s5>
</fC03>
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<s5>07</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Processus fabrication</s0>
<s5>08</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Production process</s0>
<s5>08</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Proceso fabricación</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Attaque chimique</s0>
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<fC03 i1="06" i2="X" l="ENG"><s0>Chemical etching</s0>
<s5>09</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Propiedad mecánica</s0>
<s5>10</s5>
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<s5>11</s5>
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<fC03 i1="08" i2="X" l="GER"><s0>Experimentelle Untersuchung</s0>
<s5>11</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Estudio experimental</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Essai dureté</s0>
<s5>12</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Hardness test</s0>
<s5>12</s5>
</fC03>
<fC03 i1="09" i2="X" l="GER"><s0>Haerteversuch</s0>
<s5>12</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Ensayo dureza</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Essai flexion</s0>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Bending test</s0>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Ensayo flexion</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Microusinage</s0>
<s5>14</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Micromachining</s0>
<s5>14</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Micromaquinado</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Indium phosphure</s0>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="X" l="GER"><s0>Indiumphosphid</s0>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>19</s5>
</fC03>
<fN21><s1>159</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Low Dimensional Structures and Devices</s1>
<s2>2</s2>
<s3>Lisbon PRT</s3>
<s4>1997-05-19</s4>
</fA30>
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</standard>
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Micromachining and mechanical properties of GaInAs/InP microcantilevers

Micromachining and mechanical properties of GaInAs/InP microcantilevers

Descripteurs français

English descriptors

Abstract

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